Title :
Low damage InP sidewall formation by reactive ion etching
Author :
Saga, Nobuhiro ; Masuda, Takeyoshi ; Kishi, Takeshi ; Murata, Michio ; Yamaguchi, Akira ; Katsuyama, Tsukuru
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
We investigated the sidewall damage formed by electron-cyclotron-resonance reactive ion etching (ECR-RIE) using CH4/H2. It was found that the reverse current of p-i-n junctions is affected by the O2 plasma treatment conditions for removing the hydrocarbon deposited on the etching mask during etching. By optimizing the treatment conditions, we succeeded in low damage sidewall formation, which is of the same quality as the mesa formed by wet etching. AES measurements indicate that the thickness of the damaged region is restricted to about 8 nm
Keywords :
Auger electron spectra; III-V semiconductors; indium compounds; leakage currents; plasma materials processing; sputter etching; AES measurements; CH4/H2; ECR-RIE; H2; InP; O2; O2 plasma treatment conditions; damaged region thickness; electron-cyclotron-resonance reactive ion etching; etching mask; hydrocarbon removal; low damage sidewall formation; mesa diameter dependence; methane; p-i-n junction reverse current; Hydrocarbons; Indium phosphide; PIN photodiodes; Plasma applications; Plasma measurements; Silicon compounds; Spectroscopy; Stimulated emission; Surface treatment; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929106
