Title :
Growth temperature dependence of InAs islands grown on GaAs (001) substrates
Author :
Suekane, Osamu ; Okui, Toshiko ; Takata, Masahiro ; Hasegawa, Shigehiko ; Nakashima, Hisao
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
Scanning tunneling microscopy (STM) connected to molecular beam epitaxy (MBE) has been used to investigate InAs islands and wetting layers (WLs) on GaAs(001) substrates. STM results reveal that the size and density of InAs islands strongly depend on the growth temperature. The density of InAs islands decreases and their size increases with increasing growth temperature. From photoluminescence (PL) results, a PL peak shift is observed with increasing InAs growth temperature. This shift agrees with the results of the STM observation that larger islands are grown at higher growth temperature
Keywords :
III-V semiconductors; indium compounds; island structure; molecular beam epitaxial growth; photoluminescence; reflection high energy electron diffraction; scanning tunnelling microscopy; semiconductor growth; semiconductor quantum dots; spectral line shift; 420 to 480 C; GaAs; GaAs (001) substrates; InAs; InAs islands; MBE; PL peak shift; RHEED; STM; growth temperature dependence; island density; island size; molecular beam epitaxy; photoluminescence; quantum dots; scanning tunneling microscopy; wetting layers; Buffer layers; Gallium arsenide; Microscopy; Molecular beam epitaxial growth; Photoluminescence; Quantum dot lasers; Quantum dots; Substrates; Temperature dependence; Tunneling;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929114
