Investigation of InP epitaxial films on GaAs substrate grown by chloride vapor phase epitaxy

Author

Sawada, S. ; Matsukawa, S. ; Iwasaki, T. ; Miura, Y. ; Yokogawa, M.

Author_Institution

Sumitomo Electr. Ind. Ltd., Hyogo, Japan

fYear

2001

fDate

2001

Firstpage

303

Lastpage

306

Abstract

InP epitaxial films are grown on GaAs substrates by chloride vapor phase epitaxy (C-VPE). Good surface morphology is obtained. TEM observations of the cross-section of InP films show that dislocations generated at the interface between the substrate and the film gradually disappears towards the top surface of InP layers. This report demonstrates the possibility of large-diameter, less-fragile substrates suitable for InP epitaxial growth for high-speed devices such as HEMTs and HBTs

Keywords

III-V semiconductors; chemical vapour deposition; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; surface topography; transmission electron microscopy; vapour phase epitaxial growth; GaAs; GaAs substrate; HBTs; HEMTs; I-V characteristics; InP; InP epitaxial films; InP epitaxial growth; InP film cross-section; PL intensity; TEM observations; chloride VPE growth; chloride vapor phase epitaxy; dislocations; film-substrate interface; high-speed devices; large-diameter less-fragile substrates; surface morphology; Epitaxial growth; Gallium arsenide; Indium phosphide; Inductors; Optical microscopy; Rough surfaces; Substrates; Surface morphology; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929118

Filename

929118