Title :
Selective MOVPE of microarray waveguide for densely integrated photonic devices
Author :
Sudo, Shinya ; Kudo, Koji ; Mori, Kazuo ; Sasaki, Tatsuya
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan
Abstract :
We studied the mask interference effect in selective metal-organic vapor-phase epitaxy (MOVPE) of a microarray optical waveguide. We investigated the characteristics of waveguides having mask interference effects. Based on the experimental results, we developed a method of simulating the characteristics of a microarray waveguide that uses the mask interference constant, which depends on growth pressure. The simulation can account for the experimental results under different growth pressures and should be very useful for designing the microarray waveguides. In particular, we can use it to control the PL-wavelength profile of the microarray waveguide grown under atmospheric pressure, which is important for fabricating densely integrated photonic devices
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; light interference; masks; optical arrays; optical fabrication; optical waveguides; photoluminescence; quantum well devices; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAsP; InGaAsP compressively strained MQW; InP; InP substrate; PL-wavelength profile control; SiO2; SiO2 mask stripes; densely integrated photonic devices; growth pressure; mask interference; mask interference constant; microarray waveguide; microarray waveguide design; selective MOVPE; selective metal-organic vapor-phase epitaxy; simulation; Atmospheric waves; Epitaxial growth; Epitaxial layers; Integrated optics; Interference; National electric code; Optical devices; Optical waveguides; Photonic band gap; Semiconductor waveguides;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929140