DocumentCode
1746790
Title
Optical properties of InP self-assembled quantum dots studied by imaging and single dot spectroscopy
Author
Sugisaki, M. ; Ren, H.-W. ; Nishi, K. ; Masumoto, Y.
Author_Institution
Single Quantum Dot Project, Tsukuba Res. Center, Ibaraki, Japan
fYear
2001
fDate
2001
Firstpage
509
Lastpage
512
Abstract
The temperature dependent optical properties of InP self-assembled quantum dots (QDs) were investigated by means of micro-spectroscopy. Successive thermal quenching with increasing temperature was clearly observed. A few QDs, however, showed anomalous temperature dependence with the photoluminescence (PL) intensity recovering when the temperature was raised beyond a certain value. This phenomenon is explained by competition between radiative and nonradiative processes. In this work, the mechanism of blinking behavior was also studied. Notably, the micro-PL spectra of a blinking QD were artificially reproduced by applying an electric field to a normal QD. We concluded that the blinking is due to the trapping and delocalization of carriers at localized states near the QD. These results indicate that the optical properties of the zero-dimensional system are strongly influenced by the local environment surrounding the QDs
Keywords
III-V semiconductors; indium compounds; nonradiative transitions; photoluminescence; radiation quenching; self-assembly; semiconductor quantum dots; InP; InP self-assembled quantum dot; blinking process; carrier delocalization; carrier trapping; electric field; localized states; micro-spectroscopy; nonradiative process; optical properties; photoluminescence imaging; radiative process; single dot spectroscopy; temperature dependence; thermal quenching; zero-dimensional system; Charge-coupled image sensors; Elementary particle vacuum; Geometrical optics; Indium phosphide; Optical imaging; Physics; Quantum dots; Spectroscopy; Temperature dependence; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929192
Filename
929192
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