Title :
Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3 μm lasers using metal-organic vapor-phase epitaxy
Author :
Plaine, G. ; Asplund, C. ; Sundgren, P. ; Mogg, S. ; Hammar, M.
Author_Institution :
Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden
Abstract :
GaInNAs/GaAs quantum-well (QW) lasers emitting at 1.3 μm were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 nm, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-μm laser the transparency current was 0.8 kA/cm2, the slope efficiency 0.24 W/A per facet and T0=100 K. Comparison between PL emission properties and BA laser performance revealed a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.3 micron; FWHM; GaInNAs-GaAs; GaInNAs/GaAs quantum well; broad-area edge-emitting laser; low-temperature growth; metalorganic vapor phase epitaxy; photoluminescence spectroscopy; slope efficiency; threshold current; transparency current; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser modes; Optical materials; Photoluminescence; Quantum well lasers; Spectroscopy; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929211
