Tunable semiconductor lasers for WDM telecommunications

Author

Ackerman, D.A. ; Johnson, J.E. ; Ketelsen, L.J.P. ; Geary, J.M. ; Asous, W.A. ; Walters, F.S. ; Freund, J.M. ; Hybertsen, M.S. ; Glogovsky, K.G. ; Lentz, C.W. ; Reynolds, C.L. ; Bylsma, R.B. ; Dean, E.J. ; Koch, T.L.

Author_Institution

Agere Syst., Murray Hill, NJ, USA

fYear

2001

fDate

2001

Firstpage

571

Lastpage

574

Abstract

Wavelength selectable semiconductor lasers serve as tunable light sources in wavelength division multiplexed telecommunication systems. We report on 2.5 and 10 Gb/s electro-absorption modulated wavelength selectable laser modules based on highly reliable, closed-loop controlled, five-section InP wavelength selectable lasers

Keywords

III-V semiconductors; closed loop systems; electro-optical modulation; electroabsorption; indium compounds; laser tuning; optical communication equipment; semiconductor lasers; wavelength division multiplexing; 10 Gbit/s; 2.5 Gbit/s; InP; closed-loop control; electro-absorption modulation; semiconductor laser; telecommunication system; tunable light source; wavelength division multiplexing; wavelength selection; Chirp modulation; Distributed Bragg reflectors; Distributed feedback devices; Laser feedback; Laser modes; Laser tuning; Optical transmitters; Semiconductor lasers; Tunable circuits and devices; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929214

Filename

929214