Title :
Tunable semiconductor lasers for WDM telecommunications
Author :
Ackerman, D.A. ; Johnson, J.E. ; Ketelsen, L.J.P. ; Geary, J.M. ; Asous, W.A. ; Walters, F.S. ; Freund, J.M. ; Hybertsen, M.S. ; Glogovsky, K.G. ; Lentz, C.W. ; Reynolds, C.L. ; Bylsma, R.B. ; Dean, E.J. ; Koch, T.L.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
Abstract :
Wavelength selectable semiconductor lasers serve as tunable light sources in wavelength division multiplexed telecommunication systems. We report on 2.5 and 10 Gb/s electro-absorption modulated wavelength selectable laser modules based on highly reliable, closed-loop controlled, five-section InP wavelength selectable lasers
Keywords :
III-V semiconductors; closed loop systems; electro-optical modulation; electroabsorption; indium compounds; laser tuning; optical communication equipment; semiconductor lasers; wavelength division multiplexing; 10 Gbit/s; 2.5 Gbit/s; InP; closed-loop control; electro-absorption modulation; semiconductor laser; telecommunication system; tunable light source; wavelength division multiplexing; wavelength selection; Chirp modulation; Distributed Bragg reflectors; Distributed feedback devices; Laser feedback; Laser modes; Laser tuning; Optical transmitters; Semiconductor lasers; Tunable circuits and devices; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929214
