DocumentCode
1746910
Title
Radiation hardened memory development at Honeywell
Author
Kaakani, Hassan
Author_Institution
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Volume
5
fYear
2001
fDate
2001
Firstpage
2273
Abstract
Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper covers plans and results of our SOI technology development programs for SRAM products and giant magneto resistive (GMR) non-volatile memory
Keywords
CMOS memory circuits; SRAM chips; giant magnetoresistance; magnetoresistive devices; military equipment; radiation hardening (electronics); random-access storage; silicon-on-insulator; CMOS; GMRAM; Honeywell; SOI technology; SRAM products; giant magnetoresistive nonvolatile memory; military applications; radiation hard memory products; radiation hardened memory; space applications; CMOS technology; Consumer electronics; Magnetic materials; Nonvolatile memory; Radiation hardening; Random access memory; Read-write memory; Silicon on insulator technology; Solid state circuits; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Aerospace Conference, 2001, IEEE Proceedings.
Conference_Location
Big Sky, MT
Print_ISBN
0-7803-6599-2
Type
conf
DOI
10.1109/AERO.2001.931186
Filename
931186
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