Title :
Radiation hardened memory development at Honeywell
Author_Institution :
Solid State Electron. Center, Honeywell Inc., Plymouth, MN, USA
Abstract :
Deep submicron Silicon on Insulator (SOI) technology advancements at Honeywell have enabled new generations of radiation hard memory products. This paper covers plans and results of our SOI technology development programs for SRAM products and giant magneto resistive (GMR) non-volatile memory
Keywords :
CMOS memory circuits; SRAM chips; giant magnetoresistance; magnetoresistive devices; military equipment; radiation hardening (electronics); random-access storage; silicon-on-insulator; CMOS; GMRAM; Honeywell; SOI technology; SRAM products; giant magnetoresistive nonvolatile memory; military applications; radiation hard memory products; radiation hardened memory; space applications; CMOS technology; Consumer electronics; Magnetic materials; Nonvolatile memory; Radiation hardening; Random access memory; Read-write memory; Silicon on insulator technology; Solid state circuits; Space technology;
Conference_Titel :
Aerospace Conference, 2001, IEEE Proceedings.
Conference_Location :
Big Sky, MT
Print_ISBN :
0-7803-6599-2
DOI :
10.1109/AERO.2001.931186
