Title :
Study and characterization of copper-indium-ditelluride
Author :
Kemiha, F. ; Zegadi, A. ; Mohamadi, T.
Author_Institution :
Dept. of Electron., F.A. Setif Univ., Algeria
Abstract :
In this paper, single crystals of chalcopyrite semiconductor CuInTe2 have been grown by a vertical Bridgman technique. The Hall effect, mobility, resistivity and carrier concentration data have been obtained for several samples using the van der Pauw technique. The optical properties were studied by photoacoustic spectroscopy (PAS) in order to determine parameters such as absorption spectra, band gap and defect level states
Keywords :
Hall effect; copper compounds; crystal growth from melt; defect states; electrical resistivity; energy gap; hole density; hole mobility; indium compounds; infrared spectra; photoacoustic spectra; semiconductor growth; solar cells; ternary semiconductors; CuInTe2; Hall effect; absorption spectra; band gap; carrier concentration data; chalcopyrite semiconductor; copper indium ditelluride; defect level state; mobility; optical properties; photoacoustic spectroscopy; resistivity; semiconductor growth; single crystals; solar cells; ternary compound; van der Pauw technique; vertical Bridgman technique; Absorption; Crystals; Hall effect; Optical devices; Photonic band gap; Photovoltaic cells; Semiconductor impurities; Solid state circuits; Spectroscopy; Temperature;
Conference_Titel :
Electrical and Computer Engineering, 2001. Canadian Conference on
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-6715-4
DOI :
10.1109/CCECE.2001.933752
