Examination of features of an electronic structure of films of a-SiC: method of ultra weak X-ray spectroscopy

Author

Anokhina, I.V.

Author_Institution

Fac. of a Solid State Phys., Voronezh State Univ., Russia

fYear

2001

fDate

2001

Firstpage

14

Lastpage

15

Abstract

Discusses the influence of a-SiC films formation condition on energy allocation of valence electrons in films prepared with the gas phase chemical deposition of Si:H onto silicon substrates for various general pressures p (from 0.15 up to 1.5 kPa) and various relations between reactionary surface and volume (s/v) for stationary temperature Ts=800°C with the method of ultra weak X-ray emissive spectroscopy (UWXES)

Keywords

CVD coatings; X-ray emission spectra; amorphous semiconductors; electronic density of states; semiconductor thin films; silicon compounds; valence bands; wide band gap semiconductors; 0.15 to 1.5 kPa; 800 degC; Si; SiC-Si; energy allocation; gas phase chemical deposition; reactionary surface; semiconductor films; stationary temperature; ultra weak X-ray emissive spectroscopy; valence electrons; volume; wide band gap semiconductors; Amorphous materials; Amorphous silicon; Chemical analysis; Electrons; Physics; Semiconductor films; Solid modeling; Solid state circuits; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on

Conference_Location

Erlagol, Altai

Print_ISBN

5-7782-0347-0

Type

conf

DOI

10.1109/SREDM.2001.939130

Filename

939130