Title :
Electrical properties of thin film structures on the base of La doped semiconductor glass
Author :
Timofeev, Artem V. ; Su-Lan-Sia, T.S.
Author_Institution :
Dept. of Semicond. Electron., Moscow Tech. Univ., Russia
Abstract :
The performed research has shown that thin films of amorphous materials can be employed for creating structures with controlled NDR region of I-V characteristics by use of double injection effect. Experiments were carried out on the layer structures "glassy substrate-ITO-film As2Se3:La". Structures on their base on non-crystalline substrates can be used both for storage and processing of electrical and optical signals. The latter is of importance for control circuits of any display
Keywords :
arsenic compounds; chalcogenide glasses; lanthanum; negative resistance; semiconductor thin films; As2Se3:La-InSnO; As2Se3:La-ITO; I-V characteristics; La doped semiconductor glass; amorphous material; double injection; electrical properties; glassy substrate-ITO-As2Se3:La; negative differential resistance; thin film structure; Electron traps; Glass; Indium tin oxide; Optical bistability; Optical films; Semiconductor thin films; Spontaneous emission; Stimulated emission; Thin film devices; Threshold voltage;
Conference_Titel :
Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on
Conference_Location :
Erlagol, Altai
Print_ISBN :
5-7782-0347-0
DOI :
10.1109/SREDM.2001.939131
