Electrical properties of thin film structures on the base of La doped semiconductor glass

Author

Timofeev, Artem V. ; Su-Lan-Sia, T.S.

Author_Institution

Dept. of Semicond. Electron., Moscow Tech. Univ., Russia

fYear

2001

fDate

2001

Firstpage

16

Lastpage

17

Abstract

The performed research has shown that thin films of amorphous materials can be employed for creating structures with controlled NDR region of I-V characteristics by use of double injection effect. Experiments were carried out on the layer structures "glassy substrate-ITO-film As₂Se₃:La". Structures on their base on non-crystalline substrates can be used both for storage and processing of electrical and optical signals. The latter is of importance for control circuits of any display

Keywords

arsenic compounds; chalcogenide glasses; lanthanum; negative resistance; semiconductor thin films; As2Se3:La-InSnO; As₂Se₃:La-ITO; I-V characteristics; La doped semiconductor glass; amorphous material; double injection; electrical properties; glassy substrate-ITO-As₂Se₃:La; negative differential resistance; thin film structure; Electron traps; Glass; Indium tin oxide; Optical bistability; Optical films; Semiconductor thin films; Spontaneous emission; Stimulated emission; Thin film devices; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2001. Proceedings. 2nd Annual Siberian Russian Student Workshop on

Conference_Location

Erlagol, Altai

Print_ISBN

5-7782-0347-0

Type

conf

DOI

10.1109/SREDM.2001.939131

Filename

939131