Title : 
Current distribution and stability of CNT´s on porous Al2O3
         
        
            Author : 
Kaldasch, F. ; Günther, B. ; Müller, G. ; Engstler, J. ; Schneider, J.J.
         
        
            Author_Institution : 
Fachbereich Phys., Bergische Univ., Wuppertal, Germany
         
        
        
        
        
        
            Abstract : 
At present carbon nanotubes (CNT´s) are the most popular candidates for large-area cold cathode applications because of their simple fabrication and patterning techniques as well as low threshold fields for field emission (FE) which are usually below 10 V/μm. Practical cathodes with a high density of free-standing aligned CNT´s, however, suffer from non-uniform current distributions and mutual shielding effects. Moreover, pressure dependent current fluctuations and limits leading to insufficient long-term stability have been observed. In order to provide CNT´s with well-defined aspect ratio and high stability, porous Al2O3 templates have been considered as substrate. These might further allow the controlled growth, i.e. separation and positioning of CNT´s, by partial filling of the matrix prior to the CNT deposition. First experiments following these ideas are reported here
         
        
            Keywords : 
alumina; carbon nanotubes; cathodes; current distribution; electron field emission; porous materials; vacuum microelectronics; C-Al2O3; aspect ratio; carbon nanotubes; current distribution; field emission cathode; porous Al2O3 template substrate; stability; Carbon nanotubes; Cathodes; Charge coupled devices; Charge-coupled image sensors; Current distribution; Degradation; Filling; Iron; Scanning electron microscopy; Stability;
         
        
        
        
            Conference_Titel : 
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
         
        
            Conference_Location : 
Davis, CA
         
        
            Print_ISBN : 
0-7803-7197-6
         
        
        
            DOI : 
10.1109/IVMC.2001.939635