Title :
Determination of energy barrier heights at Si-DLC interface in field emission structures
Author :
Dmitruk, N.L. ; Evtukh, A.A. ; Litovchenko, V.G. ; Mamykin, S.V.
Author_Institution :
Inst. of Semicond. Phys., Kiev, Ukraine
Abstract :
The determination of the electron energy barriers at Si-DLC film interfaces have been performed. Two methods were used, namely, dark electrical conductivity, which allows one to estimate the energy barrier from the slope of the current-voltage characteristics in Fowler-Nordheim coordinates, and the internal photoemission method
Keywords :
carbon; dark conductivity; diamond; electron field emission; elemental semiconductors; interface states; photoemission; semiconductor heterojunctions; silicon; vacuum microelectronics; Fowler-Nordheim coordinates; Si; Si-C; Si-DLC film interfaces; current-voltage characteristics; dark electrical conductivity; energy barrier height; field emission structures; internal photoemission method; Conductive films; Conductivity; Current-voltage characteristics; Doping; Electron emission; Energy barrier; Nitrogen; Photoelectricity; Semiconductor films; Silicon;
Conference_Titel :
Vacuum Microelectronics Conference, 2001. IVMC 2001. Proceedings of the 14th International
Conference_Location :
Davis, CA
Print_ISBN :
0-7803-7197-6
DOI :
10.1109/IVMC.2001.939769
