Title :
Effects of substitution on electrical properties of (Bi1/2 Na1/2)TiO3-based lead-free ferroelectrics
Author :
Nagata, Hajime ; Takenaka, Tadashi
Author_Institution :
Fac. of Sci. & Technol., Sci. Univ. of Tokyo, Chiba, Japan
Abstract :
Dielectric, ferroelectric and piezoelectric properties of bismuth sodium titanate, (Bi1/2Na1/2)TiO3 (BNT) were studied on some additive dopants for a candidate as lead-free piezoelectric ceramics. Electromechanical coupling factors, k33 in the longitudinal mode of BNT ceramics depend on the purity of starting raw materials and additive dopants. The k33 for high and normal purities are 0.38 and 0.43, respectively. It is considered that impurities in starting materials are influence on piezoelectric properties. In the case of Mn addition, the Curie temperature, Tc , decreases rapidly with increasing amount of doped MnCO3 , and the resistivity, ρ, is enhanced to 3×1014 (Ωcm) (at 40°C) for BNT+MnCO3 0.2 (wt.%). In the case of Nb addition, Nb5+ ions substitute for Ti4+ ions as a donor. The k33 (=0.42) of Nb-doped BNT ceramics are larger than that of undoped BNT ceramic (=0.28) under the condition of the low poling field (Ep=5 kV/mm). In the case of Fe addition, Fe 3+ ions substitute for Ti4+ ions as a acceptor. The k33 (=0.18) of Fe-doped BNT ceramics are smaller than that of undoped BNT ceramic (Ep=5 kV/mm)
Keywords :
bismuth compounds; electrical resistivity; ferroelectric Curie temperature; ferroelectric materials; piezoceramics; sodium compounds; (BiNa)TiO3; (BiNa)TiO3:Fe; (BiNa)TiO3:Mn; (BiNa)TiO3:Nb; 40 C; BNT; Curie temperature; additive dopants; dielectric properties; electrical properties; electrical resistivity; electromechanical coupling factor; ferroelectric properties; lead-free piezoelectric ceramic; longitudinal mode; piezoelectric properties; raw material purity; substitution effects; Additives; Bismuth; Ceramics; Dielectrics; Environmentally friendly manufacturing techniques; Ferroelectric materials; Iron; Niobium; Raw materials; Titanium compounds;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941510