Title :
Ferroelectric property improvement of Pb(ZrxTi1-x )O3 films by source gas pulse-introduced MOCVD
Author :
Funakubo, Hiroshi ; Nagashima, Kuniharu
Author_Institution :
Dept. of Innovative & Engineered Mater., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Pb(Zr,Ti)O3 (PZT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrates at 620°C by metal organic chemical vapor deposition (MOCVD). We attempted the pulse introduction of a mixture of source gases into the reaction chamber and succeeded in the simultaneous improvement of the crystallinity, surface smoothness and electrical properties of the PZT film by this preparation method. The (111)-orientation and the surface smoothness increased. Moreover, the leakage decreased and well-saturated symmetrical P-E hysteresis loops were obtained. Remanent polarization (Pr) and the coercive field (Ec) values of this pulse-MOCVD film were 40 μC/cm2 and 80 kV/cm, and 20 μC/cm2 and 70 kV/cm for films with Zr/(Zr+Ti) of 0.42 and 0.68, respectively
Keywords :
MOCVD coatings; dielectric hysteresis; ferroelectric thin films; lead compounds; leakage currents; 620 C; PZT; PZT film; PbZrO3TiO3; Pt/Ti/SiO2/Si substrate; coercive field; crystallinity; electrical properties; ferroelectric properties; hysteresis loop; leakage current; remanent polarization; source gas pulse-introduced MOCVD; surface smoothness; Chemical vapor deposition; Crystallization; Ferroelectric materials; Gases; Hysteresis; MOCVD; Organic chemicals; Semiconductor thin films; Sputtering; Substrates;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941513
