DocumentCode
1749981
Title
Ferroelectric property improvement of Pb(ZrxTi1-x )O3 films by source gas pulse-introduced MOCVD
Author
Funakubo, Hiroshi ; Nagashima, Kuniharu
Author_Institution
Dept. of Innovative & Engineered Mater., Tokyo Inst. of Technol., Yokohama, Japan
Volume
1
fYear
2000
fDate
2000
Firstpage
67
Abstract
Pb(Zr,Ti)O3 (PZT) thin films were prepared on (111)Pt/Ti/SiO2/Si substrates at 620°C by metal organic chemical vapor deposition (MOCVD). We attempted the pulse introduction of a mixture of source gases into the reaction chamber and succeeded in the simultaneous improvement of the crystallinity, surface smoothness and electrical properties of the PZT film by this preparation method. The (111)-orientation and the surface smoothness increased. Moreover, the leakage decreased and well-saturated symmetrical P-E hysteresis loops were obtained. Remanent polarization (Pr) and the coercive field (Ec) values of this pulse-MOCVD film were 40 μC/cm2 and 80 kV/cm, and 20 μC/cm2 and 70 kV/cm for films with Zr/(Zr+Ti) of 0.42 and 0.68, respectively
Keywords
MOCVD coatings; dielectric hysteresis; ferroelectric thin films; lead compounds; leakage currents; 620 C; PZT; PZT film; PbZrO3TiO3; Pt/Ti/SiO2/Si substrate; coercive field; crystallinity; electrical properties; ferroelectric properties; hysteresis loop; leakage current; remanent polarization; source gas pulse-introduced MOCVD; surface smoothness; Chemical vapor deposition; Crystallization; Ferroelectric materials; Gases; Hysteresis; MOCVD; Organic chemicals; Semiconductor thin films; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.941513
Filename
941513
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