Title :
Miniaturized domain engineered multilayer actuators
Author :
Tuttle, B.A. ; Yang, P. ; Bourbina, M.F. ; Venturini, E.L. ; Nicolaysen, S.D. ; Olson, W. ; Samara, G.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
PMN/PT 67/33 <100> single crystals were evaluated under high drive conditions from ambient to 80°C for miniaturized multilayer actuator (MLA) applications. Multilayer actuators were fabricated under identical processing conditions using two different materials: (1) single crystal PMN/PT (SCPMN) and (2) hot-pressed PZT-5A. Five layer SCPMN actuators with individual element sizes of 3 mm×3 mm×0.25 mm have measured displacements on the order of 3 μm at 20 kV/cm unipolar field. While superior strain behavior was observed for the PMN/PT single crystals at ambient, at higher operating temperatures (50°C to 80°C), the performance declined. Insights into both device performance and the different physics governing normal ferroelectric and domain engineered materials with temperature were obtained by two techniques: (1) high field ac impedance analysis (0.6 to 8 kV/cm ac) and (2) analysis of dielectric transformation behavior with hydrostatic pressure (0 to 2 GPa)
Keywords :
ferroelectric ceramics; lead compounds; magnesium compounds; niobium compounds; permittivity; piezoceramics; piezoelectric actuators; 0 to 2 GPa; 20 to 80 degC; 3 micron; 50 to 80 degC; PMN-PbTiO3; PMN/PT; PbMgO3NbO3-PbTiO3; dielectric transformation behavior; domain engineered multilayer actuators; ferroelectric materials; high drive conditions; high field ac impedance analysis; hydrostatic pressure; operating temperatures; processing conditions; strain behavior; unipolar field; Actuators; Capacitive sensors; Crystalline materials; Crystals; Displacement measurement; Ferroelectric materials; Nonhomogeneous media; Performance analysis; Size measurement; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941526