Title :
Ferroelectric properties of Sr1-xBi2+xTa2O9 dense ceramics
Author :
Noguchi, Yuji ; Miyayama, Masaru ; Kudo, Tetsuichi
Author_Institution :
Dept. of Appl. Chem., Tokyo Univ., Japan
Abstract :
Ferroelectric properties of dense ceramics of Sr-deficient and Bi-excess strontium bismuth tantalate, Sr1-xBi2+xTa2O9, were investigated, and their crystal structures were analyzed through the powder X-ray diffraction Rietveld method. A successful pattern fitting was obtained under the assumption that Bi was substituted at the Sr site for samples with x⩽0.16, and the lattice length in the a-b plane was reduced linearly with an increase in x. Dielectric measurements revealed that the Curie temperature (TC) rose with x and that the sample with x=0.27 had a TC of 430°C which was much higher than that of the stoichiometric sample (x=0:TC=300 °C). These results strongly support the Bi substitution at the Sr site. The polarization hysteresis measurements revealed that a small amount of Bi substitution of 5% results in a marked increase in remanent polarization, however that further Bi substitution is not effective for improving the ferroelectric properties
Keywords :
X-ray diffraction; bismuth compounds; crystal structure; dielectric hysteresis; dielectric polarisation; ferroelectric Curie temperature; ferroelectric ceramics; lattice constants; stoichiometry; strontium compounds; 430 C; Bi substitution; Curie temperature; Rietveld method; SrBi2Ta2O9; compositional deviation; crystal structures; dense ceramics; densification; ferroelectric properties; lattice length; layer-structured ferroelectrics; nonvolatile random access memory; pattern fitting; perovskite blocks; polarization hysteresis; powder X-ray diffraction; stoichiometry; Bismuth; Ceramics; Dielectric measurements; Ferroelectric materials; Lattices; Polarization; Powders; Strontium; Temperature; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941534