DocumentCode :
1749999
Title :
Ferroelectric thin films on ferrites for tunable microwave device applications
Author :
Pond, J.M. ; Kirchoefer, S.W. ; Newman, H.S. ; Kim, W.J. ; Chang, W. ; Horwitz, J.S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
205
Abstract :
Wideband tunable microwave transmission lines are being developed using pulsed-laser-deposited ferroelectric thin films on liquid-phase-epitaxially grown ferrite thick films. The ferroelectric-ferrite combination makes it possible to independently tune both the inductance per unit length and capacitance per unit length of the integrated structure, and thus, overcome the deleterious effects of modifying the capacitance per unit length on the impedance match of the transmission line. Initial microwave measurements have indicated that both magnetic and electric tuning mechanisms are functional and that the phase velocity can be tuned equally well by either magnetic or electric field. An equivalent differential phase shift can be achieved with a magnetic bias on the order of 320 Oersteds as has been achieved with an electric bias of 21 kV/cm. The effects are additive to first order, allowing for maximum observed total differential phase shift of over 40 degrees at 11.6 GHz
Keywords :
Q-factor; S-parameters; coplanar waveguides; equivalent circuits; ferrite phase shifters; ferroelectric capacitors; ferroelectric thin films; microwave phase shifters; thin film capacitors; tuning; 11.6 GHz; S-parameter; capacitance per unit length; coplanar waveguide; electric tuning mechanisms; equivalent circuit; equivalent differential phase shift; ferroelectric thin films; ferroelectric-ferrite combination; impedance match; inductance per unit length; interdigitated capacitors; liquid-phase-epitaxially grown ferrite films; magnetic tuning mechanisms; phase shifter; phase velocity; pulsed-laser-deposited films; quality factor; wideband tunable microwave transmission lines; Capacitance; Ferrites; Ferroelectric materials; Inductance; Microwave devices; Thick films; Thin film devices; Transistors; Transmission lines; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.941542
Filename :
941542
Link To Document :
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