DocumentCode :
1750020
Title :
Characterization of PZN single crystals [ferroelectric properties and fracture behavior]
Author :
Wan, S. ; Lynch, C.S.
Author_Institution :
George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
347
Abstract :
PZN single crystals poled in the [100] crystallographic direction display electro-mechanical coupling coefficients around 90 %, and electric field induced strain as high as 1 %. Obtaining these very high strain levels involves driving the material through a rhombohedral to tetragonal phase change, during which the material tends to develop cracks. Driving the material with a negative electric field reverses the polarization direction due to the relatively low coercive field, but also results in cracking. This paper presents results of various measurements of fracture behavior including observations of electric field induced damage evolution in the crystals, interactions of the electric field with indentation induced flaws, and Vickers indentation measurements of fracture toughness as a function of crack orientation relative to the crystal structure
Keywords :
cracks; dielectric hysteresis; ferroelectric materials; fracture toughness; indentation; lead compounds; piezoelectric materials; PZN single crystals; Pb(Zn1/3Nb2/3)O3; PbZnO3NbO3; Vickers indentation; [100] crystallographic direction poling; crack orientation; cracks; electric field driven fatigue cracks; electric field induced damage evolution; electric field induced strain; electro-mechanical coupling coefficients; fracture behavior; fracture toughness; hysteresis loops; indentation induced flaws; mechanical fracture anisotropy; negative electric field; polarization direction reversal; rhombohedral to tetragonal phase change; very high strain levels; Capacitive sensors; Crystalline materials; Crystals; Drives; Electric variables measurement; Fatigue; Hysteresis; Mechanical engineering; Optical microscopy; Phase change materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
ISSN :
1099-4734
Print_ISBN :
0-7803-5940-2
Type :
conf
DOI :
10.1109/ISAF.2000.941569
Filename :
941569
Link To Document :
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