Influence of B site substitutions on dielectric and piezoelectric characteristics of fluoridated PZT

Author

Lebrun, L. ; Guiffard, B. ; Audigier, D. ; Boucher, E. ; Guyomar, D. ; Eyraud, L. ; Pleska, E.

Author_Institution

Lab. de Genie Electrique et Ferroelectricite, INSA de Lyon, Villeurbanne, France

Volume

1

fYear

2000

fDate

2000

Firstpage

447

Abstract

Some acceptor and fluorine co-doped PZT ceramics exhibit a low and non hysteretic dependence of d₃₃ coefficient under uniaxial static stress up to 120 MPa and of N₃₃ coefficient versus temperature between -40°C and +80°C. This behavior could be explained by a strong clamping effect of the domain walls due to the acceptor ion - F dipole, less mobile than the oxygen vacancy-acceptor ion defect dipole. In order to understand the hysteresis mechanism and the role of fluorine ions, fluoridated materials with different acceptors in B site have been prepared and characterized

Keywords

dielectric hysteresis; electric domain walls; fluorine; lead compounds; piezoceramics; -40 to 80 C; B site substitution; PZT:F; PbZrO3TiO3:F; acceptor co-doping; acceptor ion-F dipole; dielectric characteristics; domain wall clamping; fluoridated PZT; hysteresis; oxygen vacancy-acceptor ion defect dipole; piezoelectric ceramic; Ceramics; Dielectrics; Hysteresis; Iron; Lattices; Manganese; Powders; Stability; Stress; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on

Conference_Location

Honolulu, HI

ISSN

1099-4734

Print_ISBN

0-7803-5940-2

Type

conf

DOI

10.1109/ISAF.2000.941593

Filename

941593