DocumentCode
1750041
Title
Self polarization in relaxor Pb(Mg1/3Nb2/3)O 3 thin films
Author
Kighelman, Zian ; Damjanovic, Dragan ; Setter, Nava
Author_Institution
Dept. of Mater., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Volume
1
fYear
2000
fDate
2000
Firstpage
479
Abstract
Pb(Mg1/3Nb2/3)O3 (PMN) thin films were prepared from alkoxide-based solution precursors. Dielectric and electromechanical measurements were carried out. Piezoelectric response of as-prepared films was found to be large (d33=10-20 pm/V) even in absence of a DC bias field. The value of the associated self polarization in the films is estimated and its presence confirmed by zero-field pyroelectric measurements. The electrostrictive Q coefficient was determined by measuring strain (S) vs. electric field (Eac) and polarization (P) vs. electric field (Eac) loops on the same sample and under identical conditions. This allowed us to plot S vs. P2 relationship without any approximations and to determine the Q coefficient (Q=1.18×10-2 m4C-2)
Keywords
dielectric polarisation; electrostriction; lead compounds; piezoelectric thin films; pyroelectricity; PMN; PbMgO3NbO3; dielectric properties; electromechanical properties; electrostrictive coefficients; piezoelectric response; pyroelectric properties; relaxor PMN thin film; self-polarization; Dielectric measurements; Dielectric thin films; Electric fields; Electrostriction; Niobium; Piezoelectric films; Piezoelectric polarization; Pyroelectricity; Q measurement; Strain measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.941601
Filename
941601
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