Title :
Self polarization in relaxor Pb(Mg1/3Nb2/3)O 3 thin films
Author :
Kighelman, Zian ; Damjanovic, Dragan ; Setter, Nava
Author_Institution :
Dept. of Mater., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
Pb(Mg1/3Nb2/3)O3 (PMN) thin films were prepared from alkoxide-based solution precursors. Dielectric and electromechanical measurements were carried out. Piezoelectric response of as-prepared films was found to be large (d33=10-20 pm/V) even in absence of a DC bias field. The value of the associated self polarization in the films is estimated and its presence confirmed by zero-field pyroelectric measurements. The electrostrictive Q coefficient was determined by measuring strain (S) vs. electric field (Eac) and polarization (P) vs. electric field (Eac) loops on the same sample and under identical conditions. This allowed us to plot S vs. P2 relationship without any approximations and to determine the Q coefficient (Q=1.18×10-2 m4C-2)
Keywords :
dielectric polarisation; electrostriction; lead compounds; piezoelectric thin films; pyroelectricity; PMN; PbMgO3NbO3; dielectric properties; electromechanical properties; electrostrictive coefficients; piezoelectric response; pyroelectric properties; relaxor PMN thin film; self-polarization; Dielectric measurements; Dielectric thin films; Electric fields; Electrostriction; Niobium; Piezoelectric films; Piezoelectric polarization; Pyroelectricity; Q measurement; Strain measurement;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941601
