DocumentCode :
175127
Title :
The thermal scaling: From transistor to array
Author :
Tianbing Chen ; Tzung-yin Lee ; Allum, Justin ; McPartlin, Mike
Author_Institution :
Wafer Foundry Eng., Skyworks Solutions, Inc., Woburn, MA, USA
fYear :
2014
fDate :
1-3 June 2014
Firstpage :
123
Lastpage :
126
Abstract :
The electrical and thermal performance scaling from transistor to array was studied in this paper to help improve the predictive modeling of the electrical-thermal behavior of bipolar arrays. The dc and ac performance scales well at low bias but not to the medium and high bias because thermal resistance does not scale to the total emitter area. It is demonstrated that after the correction of the RTH in array models, the simulation can predict the electrical-thermal behavior of power arrays.
Keywords :
Ge-Si alloys; arrays; heterojunction bipolar transistors; semiconductor materials; thermal resistance; HBT; SiGe; ac performance scales; bipolar array model; dc performance scales; electrical performance scaling; electrical-thermal behavior predictive modeling; high bias; medium bias; power arrays; thermal performance scaling; thermal resistance; total emitter area; transistor; Arrays; Heating; Junctions; Silicon germanium; Thermal resistance; Transistors; SiGe HBT; array; power amplifier; scaling; self-heating; thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
ISSN :
1529-2517
Print_ISBN :
978-1-4799-3862-9
Type :
conf
DOI :
10.1109/RFIC.2014.6851675
Filename :
6851675
Link To Document :
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