Title :
E-band transformer-based Doherty power amplifier in 40 nm CMOS
Author :
Kaymaksut, Ercan ; Dixian Zhao ; Reynaert, Patrick
Author_Institution :
ESAT, KU Leuven, Heverlee, Belgium
Abstract :
This paper presents an 80 GHz Doherty power amplifier in 40 nm CMOS technology. The amplifier combines 4 push-pull amplifiers by using 2×2 parallel-series combiner. In addition, it employs additional LC impedance matching to enhance the back-off efficiency. The transformer-based Doherty amplifier demonstrates both high linearity and high back-off efficiency. Thus, it is tailored for high PAPR mm-wave applications such as E-band communication. The two stage Doherty power amplifier achieves 16.2 dBm output power at 0.9 V supply with a PAE of 12%. Thanks to the linearization feature of the Doherty topology the 1 dB compression point of the amplifier is as high as 15.2 dBm while the PAE at P1dB is 11.1%.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; impedance matching; millimetre wave power amplifiers; power combiners; transformers; CMOS technology; E-band communication; E-band transformer-based Doherty power amplifier; LC impedance matching; PAE; efficiency 11.1 percent; efficiency 12 percent; frequency 80 GHz; gain 1 dB; high PAPR mmwave application; parallel-series combiner; push-pull amplifier; size 40 nm; voltage 0.9 V; CMOS integrated circuits; Circuit faults; Gain; Impedance; Modulation; Power generation; Tuning; mm-wave; series combining transformer;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3862-9
DOI :
10.1109/RFIC.2014.6851687
