DocumentCode :
175166
Title :
MM-wave noise characterization of 40nm CMOS transistor for up to 67 GHz
Author :
Xi Sung Loo ; Nguyen, Hien ; Zhihong Liu ; Chew, Johnny Kok Wai ; Misljenovic, Neven ; Hosein, Bryan ; Tsironis, Christos ; Jen Shuang Wong ; Wai Heng Chow
Author_Institution :
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore, Singapore
fYear :
2014
fDate :
1-3 June 2014
Firstpage :
191
Lastpage :
194
Abstract :
This noise modelling, characterization and measurement from 0.5 GHz to 67 GHz is reported for the first time in coaxial. RF CMOS devices fabricated on GLOBALFOUNDRIES´ 40nm technology are measured with Focus Microwaves noise system for full frequency span of 67 GHz. Experimental results agree well with theoretical and modeling results.
Keywords :
CMOS integrated circuits; field effect MIMIC; integrated circuit modelling; integrated circuit noise; millimetre wave transistors; transistor circuits; CMOS transistor; GLOBALFOUNDRIES technology; MM-wave noise characterization; RF CMOS devices; focus microwave noise system; frequency 0.5 GHz to 67 GHz; noise modelling; size 40 nm; CMOS integrated circuits; Frequency measurement; Noise; Noise figure; Semiconductor device modeling; Transistors; CMOS technology; millimeter wave transistors; noise measurement; semiconductor device modeling; thermal noise; tuners;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
ISSN :
1529-2517
Print_ISBN :
978-1-4799-3862-9
Type :
conf
DOI :
10.1109/RFIC.2014.6851694
Filename :
6851694
Link To Document :
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