Frequency stabilization of IMPATT-diode oscillator by open resonator

Author

Belous, O.I. ; Fisun, A.I. ; Olchovskiy, I.P. ; Sirenko, S.P.

Author_Institution

Inst. of Radiophys. & Electron., Acad. of Sci., Kharkov, Ukraine

Volume

2

fYear

2001

fDate

2001

Firstpage

633

Abstract

The suggested approach to the frequency stabilization by OR makes it promising for using InP Gunn diodes and IMPATT diodes at over 100 GHz. In order to prevent mode jumping and to ensure good matching it is advantageous to use the OR with additional restrictions of resonance space. Owing to the high Q -factor of the oscillating circuit, the frequency noise of IMPATT-diodes is reduced to the noise level of Gunn diodes. High long-term stability can be obtained by thermostabilization of the open resonance system

Keywords

IMPATT oscillators; Q-factor; circuit noise; frequency stability; millimetre wave circuits; millimetre wave oscillators; resonators; IMPATT-diode oscillator; Q-factor; frequency noise; frequency stabilization; long-term stability; mode jumping; open resonance system; open resonator; resonance space; thermostabilization; Circuit noise; Circuit stability; Diodes; Frequency; Gunn devices; Indium phosphide; Noise level; Noise reduction; Oscillators; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Millimeter and Sub-Millimeter Waves, 2001. The Fourth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

0-7803-6473-2

Type

conf

DOI

10.1109/MSMW.2001.947256

Filename

947256