DocumentCode
1751959
Title
Analysis and test of overhanging-metal microstrip detectors
Author
Passeri, D. ; Ciampolini, P. ; Bilei, G.M. ; Angarano, M.M. ; Moscatelli, E.
Author_Institution
Dipt. di Ingegneria Electron. e dell´´Inf., Perugia Univ., Italy
Volume
1
fYear
2000
fDate
2000
Firstpage
42457
Abstract
The adoption of overhanging-metal contacts have been suggested as an effective mean to limit breakdown risks in heavy-damaged, high-voltage biased microstrip detectors. In this summary, the influence of such overhangs on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensions and different width/pitch ratios, and numerical simulation has been exploited to provide physical interpretation of the experimental findings. In particular, the non-trivial dependence of interstrip capacitance over geometrical parameters is discussed. By looking at leakage currents and charge-collection as well, it is shown that limited-extension overhangs still have highly beneficial effects on the breakdown properties, while having no practical drawbacks on the detector performance
Keywords
capacitance; leakage currents; semiconductor device noise; silicon radiation detectors; breakdown; charge-collection; interstrip capacitance; leakage currents; noise; numerical simulation; overhanging-metal contacts; overhanging-metal microstrip detectors; Breakdown voltage; Capacitance; Electric breakdown; Microstrip antenna arrays; Numerical simulation; Radiation detectors; Risk analysis; Silicon; Strips; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location
Lyon
ISSN
1082-3654
Print_ISBN
0-7803-6503-8
Type
conf
DOI
10.1109/NSSMIC.2000.949005
Filename
949005
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