• DocumentCode
    1751959
  • Title

    Analysis and test of overhanging-metal microstrip detectors

  • Author

    Passeri, D. ; Ciampolini, P. ; Bilei, G.M. ; Angarano, M.M. ; Moscatelli, E.

  • Author_Institution
    Dipt. di Ingegneria Electron. e dell´´Inf., Perugia Univ., Italy
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    42457
  • Abstract
    The adoption of overhanging-metal contacts have been suggested as an effective mean to limit breakdown risks in heavy-damaged, high-voltage biased microstrip detectors. In this summary, the influence of such overhangs on device noise parameters is analyzed, with particular reference to the interstrip capacitance. Data have been collected on a set of detectors featuring variable overhang extensions and different width/pitch ratios, and numerical simulation has been exploited to provide physical interpretation of the experimental findings. In particular, the non-trivial dependence of interstrip capacitance over geometrical parameters is discussed. By looking at leakage currents and charge-collection as well, it is shown that limited-extension overhangs still have highly beneficial effects on the breakdown properties, while having no practical drawbacks on the detector performance
  • Keywords
    capacitance; leakage currents; semiconductor device noise; silicon radiation detectors; breakdown; charge-collection; interstrip capacitance; leakage currents; noise; numerical simulation; overhanging-metal contacts; overhanging-metal microstrip detectors; Breakdown voltage; Capacitance; Electric breakdown; Microstrip antenna arrays; Numerical simulation; Radiation detectors; Risk analysis; Silicon; Strips; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2000 IEEE
  • Conference_Location
    Lyon
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-6503-8
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2000.949005
  • Filename
    949005