DocumentCode :
1751962
Title :
Silicon drift detectors with spiralling electron transport and reduced lateral broadening
Author :
Castoldi, A. ; Guazzoni, C. ; Struder, L.
Author_Institution :
Politecnico di Milano
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
13575
Abstract :
A new cylindrical drift detector has been designed, fabricated and tested in which the external applied field has radial symmetry but the electron cloud, generated by an ionizing radiation, follows a spiral-shaped path towards one central collecting electrode. Regions of deep p- and n- implants are used to generate the spiralling drift channel for the electrons close to the implanted side of the detector wafer and to suppress broadening in the direction transverse to the drift. A detailed study of the new detector (design, simulation and experimental measurements) is presented which shows the combined effect of the deep implants and of the external applied field on the electron transport. Applications of this technique are discussed, e.g. 2D position-sensing drift detectors with single output channel, compact delay lines in the microsecond range and study of long term electron drift
Keywords :
drift chambers; silicon radiation detectors; 2D position-sensing drift detectors; Si; central collecting electrode; compact delay lines; cylindrical drift detector; deep implants; electron cloud; external applied field; long term electron drift; reduced lateral broadening; silicon drift detectors; spiralling drift channel; spiralling electron transport; Anodes; Clouds; Economic indicators; Electrons; Implants; Ionizing radiation; Radiation detectors; Silicon; Spirals; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
ISSN :
1082-3654
Print_ISBN :
0-7803-6503-8
Type :
conf
DOI :
10.1109/NSSMIC.2000.949009
Filename :
949009
Link To Document :
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