Optimization of electric field distribution by free carrier injection in silicon detectors operated at low temperatures

This study presents the results on the modeling of the electric field distribution, which is controlled by injection and trapping of non-equilibrium carriers, in Si detectors irradiated by high neutron fluences. Analytical calculation of the electric field distribution in detectors irradiated by neutron fluences of 1·10¹⁴ to 5·10¹⁵ cm^-2 has been performed, which shows possibility of full depletion voltage reduction at low operational temperatures with hole injection. All calculations are focused on the improvement of charge collection efficiency and prediction for detector behavior in LHC experiments. Comparison of the results of calculations to the experimental data published earlier shows a good qualitative agreement