Improvement of radiation-hardness of double-sided silicon strip detector for Belle SVD upgrade

Author

Kaneko, J. ; Aihara, H. ; Alimonti, G. ; Hazumi, M. ; Ishino, H. ; Li, Y. ; Sumisawa, K. ; Tajima, H. ; Tanaka, J. ; Taylor, G. ; Yamamoto, H. ; Yokoyama, M. ; Varner, G.

Author_Institution

Dept. of Phys., Tokyo Inst. of Technol., Japan

Volume

1

fYear

2000

fDate

2000

Abstract

We have developed a double-sided silicon strip detector (DSSD) for the Belle Silicon Vertex Detector (SVD) upgrade. Since a radiation-hard front-end LSI has been successfully developed, the shot noise due to the radiation-induced leakage current of the sensor will be the dominant source of the noise after irradiation in the Belle. Test structures with various strip pitches and strip widths were fabricated to study optimum strip width. The temperature dependence of the leakage current was measured with a prototype sensor after irradiation. It was confirmed that the radiation-induced leakage current can be reduced by half by cooling the sensor from 25°C to 15°C. A radiation test with a prototype module consisting of a prototype sensor and front-end LSI was also performed to evaluate the radiation hardness of the whole system. The signal-to-noise ratio was found to be better than 20 up to 5 MRad

Keywords

leakage currents; position sensitive particle detectors; radiation effects; semiconductor device noise; silicon radiation detectors; Belle SVD upgrade; Silicon Vertex Detector; double-sided Si strip detector; leakage current; radiation hardness; radiation-induced leakage current; shot noise; signal-to-noise ratio; Current measurement; Decision support systems; Detectors; Large scale integration; Leakage current; Prototypes; Silicon; Strips; Temperature dependence; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2000 IEEE

Conference_Location

Lyon

ISSN

1082-3654

Print_ISBN

0-7803-6503-8

Type

conf

DOI

10.1109/NSSMIC.2000.949031

Filename

949031