DocumentCode :
1751986
Title :
Noise in CdZnTe detectors
Author :
Luke, P.N. ; Amman, M. ; Lee, J.S. ; Manfredi, P.F.
Author_Institution :
Lawrence Berkeley Lab., CA, USA
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
42485
Abstract :
Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping
Keywords :
semiconductor counters; semiconductor device noise; white noise; CdZnTe; Coulomb interaction; carrier trapping; electrode configurations; guard-ring electrode structures; parallel white noise component; semiconductor counters; surface leakage current; Electrodes; Energy resolution; Feedback; Gamma ray detection; Gamma ray detectors; Leakage current; Noise measurement; Noise reduction; Preamplifiers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
ISSN :
1082-3654
Print_ISBN :
0-7803-6503-8
Type :
conf
DOI :
10.1109/NSSMIC.2000.949041
Filename :
949041
Link To Document :
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