• DocumentCode
    1751986
  • Title

    Noise in CdZnTe detectors

  • Author

    Luke, P.N. ; Amman, M. ; Lee, J.S. ; Manfredi, P.F.

  • Author_Institution
    Lawrence Berkeley Lab., CA, USA
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    42485
  • Abstract
    Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping
  • Keywords
    semiconductor counters; semiconductor device noise; white noise; CdZnTe; Coulomb interaction; carrier trapping; electrode configurations; guard-ring electrode structures; parallel white noise component; semiconductor counters; surface leakage current; Electrodes; Energy resolution; Feedback; Gamma ray detection; Gamma ray detectors; Leakage current; Noise measurement; Noise reduction; Preamplifiers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2000 IEEE
  • Conference_Location
    Lyon
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-6503-8
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2000.949041
  • Filename
    949041