DocumentCode
1751986
Title
Noise in CdZnTe detectors
Author
Luke, P.N. ; Amman, M. ; Lee, J.S. ; Manfredi, P.F.
Author_Institution
Lawrence Berkeley Lab., CA, USA
Volume
1
fYear
2000
fDate
2000
Firstpage
42485
Abstract
Noise in CdZnTe devices with different electrode configurations was investigated. Measurements on devices with guard-ring electrode structures showed that surface leakage current does not produce any significant noise. The parallel white noise component of the devices appeared to be generated by the bulk current alone, even though the surface current was substantially higher. This implies that reducing the surface leakage current of a CdZnTe detector may not necessarily result in a significant improvement in noise performance. The noise generated by the bulk current is also observed to be below full shot noise. This partial suppression of shot noise may be the result of Coulomb interaction between carriers or carrier trapping
Keywords
semiconductor counters; semiconductor device noise; white noise; CdZnTe; Coulomb interaction; carrier trapping; electrode configurations; guard-ring electrode structures; parallel white noise component; semiconductor counters; surface leakage current; Electrodes; Energy resolution; Feedback; Gamma ray detection; Gamma ray detectors; Leakage current; Noise measurement; Noise reduction; Preamplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location
Lyon
ISSN
1082-3654
Print_ISBN
0-7803-6503-8
Type
conf
DOI
10.1109/NSSMIC.2000.949041
Filename
949041
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