DocumentCode
1751991
Title
Numerical modelling of charge-sharing in CdZnTe pixel detectors
Author
Chen, C.M.H. ; Boggs, S.E. ; Bolotnikov, A.E. ; Cook, W.R., III ; Harrison, F.A. ; Schindler, S.M.
Author_Institution
California Inst. of Technol., Pasadena, CA, USA
Volume
1
fYear
2000
fDate
2000
Firstpage
21276
Abstract
In this paper, we describe our study of charge-sharing events in CdZnTe detectors being developed for the HEFT telescope. We specify the detector design, and discuss an experiment we have performed to investigate charge sharing between pixels. We have also developed a numerical model to study the charge transport in the detector. It emulates the physical processes of charge transport within the CdZnTe crystal, especially the process of drift. We discuss this numerical model of the detector in detail. With our numerical model, we are able to reproduce the general features of the charge-sharing events. We have found that the amount of charge loss is very sensitive to the surface μτ, the product of charge mobility and trapping time, of CdZnTe; we present estimates of (μτ)surface from our model. Further work will focus on more detailed analysis of diffusion, in order to gain a complete understanding of these charge-sharing events in CdZnTe pixel detectors
Keywords
II-VI semiconductors; electron mobility; electron traps; hole mobility; hole traps; semiconductor counters; CdZnTe; CdZnTe pixel detectors; charge loss; charge mobility; charge transport; charge-sharing; diffusion; numerical model; pixels; trapping time; Anodes; Cathodes; Detectors; Electrodes; Event detection; Geometry; Numerical models; Space technology; Telescopes; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location
Lyon
ISSN
1082-3654
Print_ISBN
0-7803-6503-8
Type
conf
DOI
10.1109/NSSMIC.2000.949048
Filename
949048
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