Technological aspects of development of pixel and strip detectors based on CdTe and CdZnTe

Results on development of technologies for CdZnTe and CdTe crystal processing, photolithography, contact pad manufacture and their wirebonding are presented. Developed technologies were used for fabrication of different types of pixel and strip multidetector arrays. Their topologies and obtained performances are demonstrated. Spectra are presented. Developed technologies provided at room temperature for separate pixels in real switched-on state leakage currents 10-50 pA at a detector bias of 500 V. Interpixel resistivity on developed structures with a gap 50-100 mm was 40-300 GOhm at a voltage 10 V. At optimal temperatures we have obtained a resolution of 2-3% and 14-15% at energies 59.6 and 5.9 keV respectively