Evaluation of InP:Ti and InP:Mn and its use for particle detectors

Author

Zdansky, K. ; Pekarek, L. ; Kacerovsky, P.

Author_Institution

Inst. of Radio Eng. & Electron., Czechoslovak Acad. of Sci., Prague, Czech Republic

Volume

1

fYear

2000

fDate

2000

Abstract

Semi-insulating and semiconducting InP single crystals without intentional doping and doped with Fe, co-doped with Zn and Ti and doped with Mn were grown by Czochralski technique. Samples cut from these crystals were characterized by Hall effect measurements and DLTS. Two electron traps were found in undoped InP which concentration was suppressed in Mn doped InP. Binding energies of Fe, Ti and Mn deep level impurities were determined from the temperature dependent Hall effect measurements. The curves of Hall coefficient vs. reciprocal temperature decline from straight lines at low temperatures for InP:Fe and for InP:Ti samples due to electron and hole mixed conductance. The value of resistivity reaches about 10⁶ Ωm at 230 K and 100 K for InP:Ti and InP:Mn, respectively, the value suitable for using these materials for designing particle detectors operating at the low temperatures

Keywords

Hall effect; III-V semiconductors; crystal growth from melt; deep level transient spectroscopy; indium compounds; manganese; mixed conductivity; semiconductor counters; titanium; Czochralski technique; DLTS; Hall coefficient; InP:Mn; InP:Ti; binding energies; deep level impurities; mixed conductance; particle detectors; semi-insulating InP single crystals; semiconducting InP single crystals; temperature dependent Hall effect measurements; Crystals; Electron traps; Hall effect; Indium phosphide; Iron; Radiation detectors; Semiconductivity; Semiconductor device doping; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2000 IEEE

Conference_Location

Lyon

ISSN

1082-3654

Print_ISBN

0-7803-6503-8

Type

conf

DOI

10.1109/NSSMIC.2000.949064

Filename

949064