Title :
Dependence of scintillation characteristics in the CsI(Tl) crystal on Tl* concentrations under electron and alpha particles excitations
Author :
Hamadaa, M.M. ; Costa, F.E. ; Pereira, M.C.C. ; Kubota, S.
Author_Institution :
IPEN-CNEN/S, Cidade Univ., Sao Paulo, Brazil
Abstract :
This paper reports the emission spectra, pulse heights and decay curves of CsI(Tl) crystals with a Tl* concentration ranging from 10-6 mol to 10-2 mol, under electron and alpha particle excitations. Larger pulse heights from the crystals with Tl+concentration of more than 10-3 mol were observed for a higher ionization density of alpha particle excitation, compared with those of electron excitation. This enhancement may be explained in terms of the higher. Scintillation efficiency for higher Tl* concentration. Decay curves under electron and alpha particle excitations were compared with the decay curve under pulsed UV excitation. The observed decay curves were explained in terms of the sum of the three energy transfer processes to create excited states (Tl+)*; the prompt process, the Vk diffusion process to Tl0 and the electron release process from Tl0 to Tl++. Here, Tl0 and Tl++ were-produced through (Tl++ electron)→Tl0 and (Tl++ hole (or Vk)) →Tl++
Keywords :
alpha-particle effects; caesium compounds; electroluminescence; electron beam effects; ionoluminescence; scintillation; solid scintillation detectors; thallium; CsI(Tl) crystal; CsI:Tl; Tl* concentrations; Vk diffusion process; alpha particles excitations; decay curve; electron excitations; electron release process; energy transfer processes; excited states; ionization density; prompt process; pulsed UV excitation; scintillation characteristics; scintillation efficiency; Alpha particles; Charge carrier processes; Diffusion processes; Electron emission; Energy exchange; Ionization; Photomultipliers; Photonic crystals; Pulse measurements; Solid scintillation detectors;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
Print_ISBN :
0-7803-6503-8
DOI :
10.1109/NSSMIC.2000.949150