Title :
Radiation-hardness of VA1 with sub-micron process technology
Author :
Yokoyama, M. ; Aihara, H. ; Hazumi, M. ; Ishino, H. ; Kaneko, J. ; Li, Y. ; Marlow, D. ; Mikkelsen, S. ; Nygard, E. ; Tajima, H. ; Talebi, J. ; Varner, G. ; Yamamoto, Hiroshi
Author_Institution :
Dept. of Phys., Tokyo Univ., Japan
Abstract :
We have studied the radiation hardness of the VA1, a Viking-architecture preamplifier VLSI chip. LSI samples are fabricated by 0.8 μm and 0.35 μm process technology to improve radiation hardness of the LSI for the Belle silicon vertex detector upgrade. We have observed significant improvement of the radiation hardness with 0.8 μm technology. Little degradation of noise and gain is observed to total dose of 20 Mrad for the VA1 fabricated by the 0.35 μm technology. We find that the radiation hardness improves at a scaling of better than tox-6 (tox: oxide thickness). Basic parameters of MOSFETs are also studied to understand a mechanism of the radiation damage in the VA1
Keywords :
MOS analogue integrated circuits; VLSI; nuclear electronics; position sensitive particle detectors; preamplifiers; radiation effects; radiation hardening; silicon radiation detectors; 20 Mrad; Belle Si vertex detector upgrade; MOSFET; Si; VA1; Viking-architecture preamplifier VLSI chip; radiation damage; radiation hardness; submicron process technology; Degradation; Electron traps; FETs; Ionizing radiation; Large scale integration; Physics; Radiation detectors; Threshold voltage; Transconductance; White noise;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
Print_ISBN :
0-7803-6503-8
DOI :
10.1109/NSSMIC.2000.949863
