Title :
Driving spectral resolution to the noise limit in semiconductor gamma detector arrays
Author_Institution :
Guma Sci., Rehovot, Israel
Abstract :
Shape time adjustment of a standard detector circuit improves the resolution of a single pixel of a detector array to the noise limit. Steady flow of gamma generated charge, in a detector bulk, induces fast signal build-up, as the charge arrives near to a single pixel. The build-up period is shorter than the electron transition time from contact to contact. The circuit shape time response is adjusted to overlap with the fast buildup period. The shape time determines a distance range, extending from the negative contact, where the detector signal does not depend on the position of photon absorption. The noise limited line width is consistent with published data of higher line resolution than predicted by the small pixel theory
Keywords :
gamma-ray detection; nuclear electronics; pulse shaping circuits; semiconductor counters; semiconductor device noise; circuit shape time response; electron transition time; fast signal build-up; negative contact; noise limit; photon absorption; semiconductor gamma detector arrays; shape time adjustment; single pixel resolution; small pixel theory; spectral resolution; Circuit noise; Electrons; Gamma ray detection; Gamma ray detectors; Noise shaping; Semiconductor device noise; Sensor arrays; Shape; Signal generators; Signal resolution;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2000 IEEE
Conference_Location :
Lyon
Print_ISBN :
0-7803-6503-8
DOI :
10.1109/NSSMIC.2000.949893