DocumentCode :
175249
Title :
A 200GHz power mixer in 130nm-CMOS employing nonlinearity engineering
Author :
Sharma, Jaibir ; Dinc, Tolga ; Krishnaswamy, Harish
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fYear :
2014
fDate :
1-3 June 2014
Firstpage :
347
Lastpage :
350
Abstract :
CMOS high-mmWave/sub-mmWave sources leverage device nonlinearity, either in oscillators or frequency multipliers, to generate harmonics beyond the technology fmax. We propose a power mixer topology that exploits non-linearity engineering to enhance the output harmonic content. By engineering the amplitude and phase of the fundamental and second-harmonic content in the mixer device voltage waveforms, the output third harmonic power is enhanced significantly beyond that achievable in conventional frequency triplers. A 200 GHz power mixer in 130 nm CMOS generates 50 μW of output power at a frequency 1.5× higher than fmax.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave mixers; submillimetre wave integrated circuits; submillimetre wave mixers; CMOS high-mm-wave-sub-mmwave sources; device nonlinearity; frequency 200 GHz; frequency multipliers; frequency triplers; fundamental-harmonic content; mixer device voltage waveforms; nonlinearity engineering; oscillators; output harmonic content; output third harmonic power; power 50 muW; power mixer topology; second-harmonic content; size 130 nm; CMOS integrated circuits; Harmonic analysis; Logic gates; Mixers; Oscillators; Power generation; Power system harmonics; CMOS; frequency multipliers; mm-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium, 2014 IEEE
Conference_Location :
Tampa, FL
ISSN :
1529-2517
Print_ISBN :
978-1-4799-3862-9
Type :
conf
DOI :
10.1109/RFIC.2014.6851738
Filename :
6851738
Link To Document :
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