Analysis of crosstalk delay using mixed CNT bundle based through silicon vias

Author

Majumder, Manoj Kumar ; Kumari, Akanksha ; Kaushik, B.K. ; Manhas, Sanjeev Kumar

Author_Institution

Indian Inst. of Technol. Roorkee, Roorkee, India

fYear

2014

fDate

1-3 June 2014

Firstpage

441

Lastpage

444

Abstract

This research paper presents a new method to reduce crosstalk of carbon nanotube (CNT) bundle based through silicon vias (TSVs). For this, a unique structure of mixed CNT bundled (MCB) TSV is proposed with specific arrangement of single- (SWCNT) and multi-walled CNTs (MWCNTs). An equivalent electrical model is presented for different MCB configurations wherein MWCNTs are placed at peripheral layers to the centrally located SWCNTs. A significant reduction in crosstalk induced delay is observed for higher number of peripheral layers containing MWCNTs. For different TSV heights, the overall reduction in crosstalk induced delay is 44.03% using novel MCB instead of conventional SWCNT bundle.

Keywords

carbon nanotubes; crosstalk; integrated circuit modelling; three-dimensional integrated circuits; MCB TSV; MCB configuration; MWCNT; SWCNT bundle; TSV height; carbon nanotube; crosstalk delay analysis; crosstalk reduction; crosstalk-induced delay; equivalent electrical model; mixed CNT bundle-based through silicon vias; multiwalled CNT; peripheral layer; Carbon nanotubes; Crosstalk; Delays; Quantum capacitance; Silicon; Three-dimensional displays; Through-silicon vias; Carbon nanotube (CNT); crosstalk; delay; mixed CNT bundle (MCB); nanotechnology; through silicon vias (TSVs);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium, 2014 IEEE

Conference_Location

Tampa, FL

ISSN

1529-2517

Print_ISBN

978-1-4799-3862-9

Type

conf

DOI

10.1109/RFIC.2014.6851762

Filename

6851762