DocumentCode
1753148
Title
Electronic Properties of Silicon Nanowires: Confined Phonons and Surface Roughness
Author
Ramayya, E.B. ; Knezevic, I. ; Vasileska, D. ; Goodnick, S.M.
Author_Institution
Department of Electrical and Computer Engineering, University of Wisconsin — Madison, Madison, WI 53706, USA, ramayya@wisc.edu
Volume
1
fYear
2006
fDate
17-20 June 2006
Firstpage
20
Lastpage
22
Abstract
Electron mobility in narrow, rectangular silicon nanowires is calculated using a Schrödinger-Monte-Carlo-Poisson transport simulator. Mobility lowering due to the carrier scattering with confined phonons in narrow wires and the influence of surface roughness within Ando’s model are investigated.
Keywords
confined phonons; silicon nanowire; surface roughness; Acoustic scattering; Electron mobility; Light scattering; Nanowires; Optical scattering; Particle scattering; Phonons; Rough surfaces; Silicon; Surface roughness; confined phonons; silicon nanowire; surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247556
Filename
1717006
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