Title :
Structural and Optical Characterization of InAs/GaSb nanoscale superlattices for mid-infrared detection
Author :
Rodriguez, J.B. ; Plis, E. ; Lee, S.J. ; Dawson, L.R. ; Krishna, S.
Author_Institution :
Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard SE, Albuquerque NM 87106
Abstract :
Optimization of various growth parameters for Type-II GaSb(10MLs)/InAs(10MLs) nanoscale superlattices and GaSb layers, grown by solid molecular beam epitaxy, has been undertaken. These include the As/Sb soak times and substrate temperature during the growth. We present optical and structural characterization for these heterostructures, using high resolution X-ray diffraction (HRXRD), photoluminescence (PL) and atomic force microscopy (AFM). Optimized parameters were then used to grow a thick structure suitable for mid-infrared detection.
Keywords :
Antimonides; Mid-infrared photodetector; Molecular beam epitaxy; Nanoscale; Superlattices; Atom optics; Atomic force microscopy; Molecular beam epitaxial growth; Optical diffraction; Optical microscopy; Optical superlattices; Solids; Substrates; Temperature; X-ray diffraction; Antimonides; Mid-infrared photodetector; Molecular beam epitaxy; Nanoscale; Superlattices;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247577
