Title :
Molecular Beam Epitaxy of GaAs Nanowires on Si Substrates
Author :
Ihn, Soo-Ghang ; Song, Jong-In ; Kim, Young-Hun ; Lee, Jeong Yong ; Soo-Ghang Ihn ; Jong-In Song ; Young-Hun Kim ; Jeong Yong Lee
Author_Institution :
Dept. of Information and Communications, Gwangju Institute of Science and Technology (GIST), Gwangju, Korea
Abstract :
Au-catalyzed GaAs nanowires were epitaxially grown on Si substrates by vapor-liquid-solid growth with the molecular beam epitaxy (MBE) method. The MBE growth could produce controlled crystalline orientation and uniform diameter along the wire axis of the GaAs nanowires by adjusting growth conditions such as growth temperature and V-III flux ratio. Growths of GaAs〈001〉 as well as GaAs〈111〉 nanowires were observed by transmission electron microscopy and scanning electron microscopy. Well-aligned GaAs〈111〉 nanowires on a Si
Keywords :
GaAs on Si; Crystallization; Gallium arsenide; III-V semiconductor materials; Materials science and technology; Molecular beam epitaxial growth; Nanowires; Optical microscopy; Scanning electron microscopy; Substrates; Transmission electron microscopy; GaAs on Si; molecular beam epitaxy; nanowires;
Conference_Titel :
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN :
1-4244-0077-5
DOI :
10.1109/NANO.2006.247581
