DocumentCode
1753219
Title
Parameter Selection for Single-Electron Threshold Logic with Reliability Analysis
Author
Chen, Chunhong ; Mi, Jialin
Author_Institution
Department of Electrical and Computer Engineering, University of Windsor, Ontario, Canada N9B 3P4, Email: cchen@uwindsor.ca
Volume
1
fYear
2006
fDate
17-20 June 2006
Firstpage
371
Lastpage
374
Abstract
This paper proposes a general strategy of parameter selection for single-electron threshold gates. By considering the background charges with the gates, we analyze and optimize the parameters to improve their reliability. All circuits with given parameters are simulated and verified by SIMON — a simulator for single-electron circuits
Keywords
parameters; reliability; single-electron threshold logic; Boolean functions; CMOS logic circuits; Capacitance; Circuit simulation; Electrons; Logic circuits; Logic design; Logic devices; RLC circuits; Voltage; parameters; reliability; single-electron threshold logic;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2006. IEEE-NANO 2006. Sixth IEEE Conference on
Print_ISBN
1-4244-0077-5
Type
conf
DOI
10.1109/NANO.2006.247654
Filename
1717104
Link To Document