Title :
Prediction of slip generation during rapid thermal processing
Author :
Higuchi, Nao ; Matsumura, Hiroshi ; Watanabe, Shinji ; Shishiguchi, Seiichi
Author_Institution :
Renesas Electron. Corp., Sagamihara, Japan
Abstract :
Advanced device scaling requires thinner, higher quality oxides with low leakage and high reliability, and tighter process control, whereas a small temperature gradient on a heated wafer above 1000C causes a plastic deformation as crystalline slip, which strongly affects the device production yield. Hence, we propose a real-time technique to predict slip generation in rapid thermal processing (RTP) tools, and confirm the validity of the prediction model.
Keywords :
plastic deformation; rapid thermal processing; semiconductor device manufacture; slip; advanced device scaling; crystalline; device production yield; heated wafer; plastic deformation; process control; rapid thermal processing tool; slip generation prediction; ISO standards;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X