DocumentCode :
1753970
Title :
Optimal fabrication process for mems pressure sensor by 8inch CMOS
Author :
Kai, Tadashi ; Inoue, Katsuyuki ; Adachi, Y. Oshitaka
Author_Institution :
OMRON Corp., Yasu, Japan
fYear :
2010
fDate :
18-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
We have developed the MEMS piezo pressure sensor by utilizing CMOS process modules and tool-sets to challenge faster time to market and faster time to volume with high yield. The MEMS device has the commonality of process, tools, material, and design system and qualification method with 0.35um CMOS device. The CMOS integration approach also showed the high quality as small variation of offset voltage and lower manufacturing cost compared with traditional MEMS development approach.
Keywords :
CMOS integrated circuits; microsensors; piezoelectric devices; pressure sensors; semiconductor device manufacture; CMOS device; CMOS integration; CMOS process module; MEMS piezo pressure sensor; optimal fabrication process; size 0.35 mum; size 8 inch; CMOS integrated circuits; CMOS process; Hysteresis; Linearity; Micromechanical devices; Transistors; Variable speed drives;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5750239
Link To Document :
بازگشت