ALD-SiO2 deposition and CD slimming techniques for double patterning and a heater-less batch tool

An atomic layer deposition (ALD)-SiO₂ film for use as the spacer mask in self-aligned double patterning (DP) and a slimming process of critical dimension (CD) for the photoresist pattern are described. The ALD-SiO₂ film deposition and the photoresist pattern slimming are processed with the vertical batch semiconductor production system for 300 mm wafers at room temperature. The room temperature process does not require a main heater and cooling water, and therefore greatly reduces CO₂ emissions and impact on the environment.