Title :
Crystalline grain size of nickel-platinum silicide films and their impact on device characteristics
Author :
Yonamoto, Yoshiki ; Futase, Takuya ; Akamatsu, Naotoshi ; Inaba, Yutaka ; Tanimoto, Hisanori
Author_Institution :
Hitachi, Ltd., Yokohama, Japan
Abstract :
The recently developed partial-conversion (PC) process was examined for the fabrication of a nickel-platinum silicide film. The PC process can drastically improve the SRAM standby current characteristics. The underlying mechanism was also investigated with respect to the crystalline structure and it was confirmed that the improvement was due to a reduction of the crystalline grain size of the silicide by the PC process.
Keywords :
SRAM chips; films; nickel compounds; platinum compounds; NiPtSi; SRAM standby current characteristic; crystalline grain size; nickel-platinum silicide films; partial-conversion process; static random access memory; Atmosphere; Random access memory; Silicides; Silicon;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
