DocumentCode
1753973
Title
Crystalline grain size of nickel-platinum silicide films and their impact on device characteristics
Author
Yonamoto, Yoshiki ; Futase, Takuya ; Akamatsu, Naotoshi ; Inaba, Yutaka ; Tanimoto, Hisanori
Author_Institution
Hitachi, Ltd., Yokohama, Japan
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
The recently developed partial-conversion (PC) process was examined for the fabrication of a nickel-platinum silicide film. The PC process can drastically improve the SRAM standby current characteristics. The underlying mechanism was also investigated with respect to the crystalline structure and it was confirmed that the improvement was due to a reduction of the crystalline grain size of the silicide by the PC process.
Keywords
SRAM chips; films; nickel compounds; platinum compounds; NiPtSi; SRAM standby current characteristic; crystalline grain size; nickel-platinum silicide films; partial-conversion process; static random access memory; Atmosphere; Random access memory; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750242
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