Title :
Influence of airborne H2S on haze generation in ArF lithography
Author :
Tamaoki, Makiko ; Uemura, Eri ; Nishiki, Kazuhiro ; Hatano, Masayuki ; Aiga, Fumihiko
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
Airborne H2S contamination exists in cleanroom air, scanner tool environment, and facility CDA. It was confirmed by laser radiation test that H2S causes haze formation by reaction with O3, and therefore H2S in the ArF lithography environment should be controlled in the same way as SO2. It is necessary to select an adequate chemical filter to remove H2S effectively.
Keywords :
air cleaners; argon compounds; filtration; hydrogen compounds; laser beam effects; lithography; surface contamination; ArF; H2S; O3; SO2; airborne contamination; airborne dihydrogen sulfide; chemical filter; cleanroom air; facility CDA; haze formation; haze generation; laser radiation test; lithography; scanner tool environment; Lithography;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
