Title :
Effective cleaning of Si by the dry ice blasting for future dry process technology
Author :
Satoh, H. ; Uchida, K. ; Koizumi, A. ; Nozaki, S. ; Kondou, W. ; Hosono, H.
Author_Institution :
Grad. Sch. of Inf. & Eng., Univ. of Electro-Commun., Tokyo, Japan
Abstract :
The dry ice blasting has demonstrated effective cleaning of Si by removal of contaminants and native oxide. The C-V and I-V characteristics of a MOS capacitor fabricated on the dry ice-cleaned Si are as good as those of a MOS capacitor fabricated on RCA-cleaned Si. This result suggests that the dry ice blasting can be used to clean Si wafers as a promising dry process in the Si VLSI technology.
Keywords :
MOS capacitors; cleaning; drying; wafer-scale integration; C-V characteristics; I-V characteristics; MOS capacitor fabrication; Si; Si VLSI technology; clean Si wafers; cleaning; contaminants; dry ice blasting; dry process technology; native oxide; Atmospheric measurements; Capacitance-voltage characteristics; Cleaning; Particle measurements; Pollution measurement; Silicon; Substrates;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
