DocumentCode
1753986
Title
Direct correlation between electrical failure and haze signals of DF (dark field) inspectors
Author
Fujiyoshi, Katsuhiro ; Isaka, Tomoko ; Sasahara, Kyoko ; Nagaishi, Hiroshi ; Sakurai, Koichi
Author_Institution
Renesas Electron. Corp., Ibaraki, China
fYear
2010
fDate
18-20 Oct. 2010
Firstpage
1
Lastpage
4
Abstract
A correlation between “haze” signals from DF (dark field) inspectors and electrical failure rates is reported. We provide experimental data that reflect a direct correlation between haze-signal values and the rate of electrically failing bits in advanced SRAM. This result is considered in the light of experiments including haze signals produced by wafers on which polystyrene latex (PSL) particles had been scattered. We also introduce a practical application of haze mapping to the QC of incoming materials based on the identified correlations.
Keywords
SRAM chips; failure analysis; inspection; semiconductor industry; PSL particles; SRAM; dark field inspectors; electrical failure; haze signals; polystyrene latex; wafers; Correlation; Metals; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location
Tokyo
ISSN
1523-553X
Print_ISBN
978-1-4577-0392-8
Electronic_ISBN
1523-553X
Type
conf
Filename
5750255
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