• DocumentCode
    1753989
  • Title

    Optimization of test parameters for the thermal resistance

  • Author

    Murashima, Shigenobu ; Yamazaki, Shigehiro

  • Author_Institution
    Renesas Kansai Semicond. Co., Ltd., Otsu, Japan
  • fYear
    2010
  • fDate
    18-20 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Thermal resistance called Rth is very important characteristics of power MOSFETs in terms of setting the heat free. ΔVF method has been generally applied on Rth measurement of power MOSFETs. It is difficult, however, to reject inferior products with high accuracy that have local void area in a soldering by only using ΔVF method. In this paper we succeeded in finding the accurate test parameter of ΔVF referring to die-bonding quality.
  • Keywords
    power MOSFET; semiconductor device testing; soldering; die-bonding quality; optimization; power MOSFET; soldering; test parameters; thermal resistance; Q measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2010 International Symposium on
  • Conference_Location
    Tokyo
  • ISSN
    1523-553X
  • Print_ISBN
    978-1-4577-0392-8
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5750259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1753989