DocumentCode :
1753989
Title :
Optimization of test parameters for the thermal resistance
Author :
Murashima, Shigenobu ; Yamazaki, Shigehiro
Author_Institution :
Renesas Kansai Semicond. Co., Ltd., Otsu, Japan
fYear :
2010
fDate :
18-20 Oct. 2010
Firstpage :
1
Lastpage :
4
Abstract :
Thermal resistance called Rth is very important characteristics of power MOSFETs in terms of setting the heat free. ΔVF method has been generally applied on Rth measurement of power MOSFETs. It is difficult, however, to reject inferior products with high accuracy that have local void area in a soldering by only using ΔVF method. In this paper we succeeded in finding the accurate test parameter of ΔVF referring to die-bonding quality.
Keywords :
power MOSFET; semiconductor device testing; soldering; die-bonding quality; optimization; power MOSFET; soldering; test parameters; thermal resistance; Q measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2010 International Symposium on
Conference_Location :
Tokyo
ISSN :
1523-553X
Print_ISBN :
978-1-4577-0392-8
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5750259
Link To Document :
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